A Field Effect Transistor was fabricated at UPRH .
No lithography was used (i.e. no harsh chemicals used) to define the source and drain electrodes, instead a TEM grid was used as a shadow mask. This is new to graphene based device fabrication.
The device was tested in vacuum under UV irradiation
We found that it was possible to dope graphene with no change in the charge mobility (see top figure).
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